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英语翻译Fig.7 shows 3D images and surface roughness of the Siwaf
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英语翻译
Fig.7 shows 3D images and surface roughness of the Siwafer by AFM to compare the unimplanted with implanted surface.Roughness of Si-wafer before N+ ion implantation is about 6 Å while it reduced to about 3 Å after implantation.The lowest surface roughness was obtained on the sample implanted with 1×1017 N cm−2 dose.This result means that the nitrogen ion implantation by PSII causes surface morphology change together with improvement in mechanical properties of trivalent chromium surface.
PSII：等离子体源离子注入
英语翻译
Fig.7 shows 3D images and surface roughness of the Siwafer by AFM to compare the unimplanted with implanted surface.Roughness of Si-wafer before N+ ion implantation is about 6 Å while it reduced to about 3 Å after implantation.The lowest surface roughness was obtained on the sample implanted with 1×1017 N cm−2 dose.This result means that the nitrogen ion implantation by PSII causes surface morphology change together with improvement in mechanical properties of trivalent chromium surface.
PSII：等离子体源离子注入
Fig.7 shows 3D images and surface roughness of the Siwafer by AFM to compare the unimplanted with implanted surface.Roughness of Si-wafer before N+ ion implantation is about 6 Å while it reduced to about 3 Å after implantation.The lowest surface roughness was obtained on the sample implanted with 1×1017 N cm−2 dose.This result means that the nitrogen ion implantation by PSII causes surface morphology change together with improvement in mechanical properties of trivalent chromium surface.
PSII：等离子体源离子注入
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